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FCH110N65F-F155

Manufacturer:

On Semiconductor

Mfr.Part #:

FCH110N65F-F155

Datasheet:
Description:

MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 357 W 650 V Continuous Drain Current (ID):35 A 98 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Resistance110 mΩ
PackagingTube
RoHSCompliant
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation357 W
Power Dissipation357 W
Number of Channels1
Input capacitance4.895 nF
Continuous Drain Current (ID)35 A
Rds On Max110 mΩ
Drain to Source Voltage (Vdss)650 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time31 ns
Turn-Off Delay Time89 ns
Element ConfigurationSingle
Fall Time5.7 ns
Rise Time21 ns
Gate Charge98 nC
Drain to Source Resistance110 mΩ
Gate to Source Voltage (Vgs)30 V
Drain to Source Breakdown Voltage (Vds)650 V
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage5 V

Stock: 142

Distributors
pcbx
Unit Price$6.99264
Ext.Price$6.99264
QtyUnit PriceExt.Price
1$6.99264$6.99264
10$6.08602$60.86020
25$5.74662$143.66550
50$5.42615$271.30750
100$5.12354$512.35400